Global High-k and ALD/CVD Metal Precursors Market Overview
The key drivers impacting the high-k and ALD/CVD metal precursors market are the growing demand owing to extensive application in various areas. For instance, high-k dielectric layers find wide applications in metal-insulator-metal (MIM), non-volatile memories and capacitors, dynamic random-access memory (DRAM), organic thin-film transistors in organic light-emitting diodes (OLEDs), and other electrical components. Moreover, the constant demand for miniaturization and the need for improving the performance of a variety of electronics and semiconductor devices contribute to high-k and ALD/CVD metal precursors market demand in the later years.
According to Value Market Research, the global high-k and ALD/CVD metal precursors market size was valued at about USD 457 million in 2022 and is estimated to grow at a CAGR of around 9% during the forecast period 2023 to 2030.
The High demand for several thin-film materials for several new industrial applications and constant research on atomic layer deposition of noble metals such as ruthenium, rhodium, iridium, palladium, and platinum will likely augment the need for high-k and ALD/CVD metal precursors in the forecast period. Also, the advancements in nanotechnology, rising development of LED technology, and high dielectric constants, insulators are positively impacted market growth. However, the ALD/CVD process is limited to a few types of metal that hamper the market in the long run. In addition, the highly competitive high-k and ALD/CVD metal precursors market impede market growth. Nonetheless, ongoing market trends, such as penetration into multiple applications like soaring demand for more advanced IC device structures in the semiconductor device manufacturing area, might provide considerable opportunities to the market's leading players.High-k and ALD/CVD metal precursors market is widespread, with many local and international players. The market leaders follow diverse strategies to strengthen their market, such as amalgamation, extending product portfolio, acquisitions, contracts, product upgrades to raise their market share globally. The key players in the report are Air Liquide, Air Products & Chemicals Inc., Praxair, Linde, Dow Chemical, Tri Chemical Laboratories Inc., Samsung, Strem Chemicals Inc., Colnatec, Merck KGAA.
In this research report, the high-k and ALD/CVD metal precursors market is segmented by technology and region.
Analysis by Technology:
By technology, the report is segmented into interconnecting, capacitors, and gates. The gates segment dominates with a significant CAGR of 14% in the forecast period. It is because High-k precursors are primarily used for manufacturing gates and capacitors, while metal precursors are used for producing electrodes and interconnects. Moreover, growing research has been done on the ALD technique to create thin films utilizing high-k dielectric materials, such as Ta2O5, Al2O3, HfO2, and ZrO2 for DRAM, high-k gate oxides, and nitrides for electrodes and interconnects, thereby contributes to the growth of gates segment in the forecast period.
Analysis by Region:
In the regional outlook of the global high-k and ALD/CVD metal precursors market, the Asia Pacific region dominates with a considerable market share of 36% in 2020. It is because of the rising demand for semiconductor devices in India, Brazil, Russia, India, and China (BRIC) economies, owing to the increasing need for end-use electronic products with high portability, low cost, and high range. Moreover, the increased demand for electronic products in China and the continual outsourcing of electronic equipment production to China contribute to the tremendous market growth across the Asia Pacific.
Market Segmentation covered in the Report:
By Technology
- Interconnect
- Capacitors
- Gates
By Region
- North America
- Europe
- Asia Pacific
- Latin America
- Middle East and Africa
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