The global demand for GaN Power Device Market is presumed to reach the valuation of nearly USD XX MN by 2028 from USD XX MN in 2021 with a CAGR of XX% during the period of 2022-2028. Whereas with regards to volume, the market was calculated XX Thousand Units in 2021 and foreseen to touch XX Thousand Units by 2028 with a CAGR of XX% during 2022-2028.
GaN, which is the symbol for gallium nitride is referred for the GaN transistors which have taken over the market as the substitute of the silicon-based transistors. They have more power output and can be used for far more easy and complicated device fabrication, which makes them ideal for use instead of the older silicon transistors. Also, for the given resistance and breakdown voltage values, the GaN transistors can be used for developing more compact devices. These GaN transistors become extremely useful when used for modern electronics like hybrid electric vehicles, photovoltaic converters, and RF switching.
Market Dynamics
The market for GaN power devices has been growing steadily since the increase in the use of various electronics for our daily activities. The increase in demand for telecommunication devices, LIDAR, AC adaptors, and various wireless devices has been acting as the main catalyst for the GaN power devices market. The coronavirus outbreak has also acted as a market driver for the GaN power devices due to the increase in demand for modems and internet routers for people working from home. Most of the modern electronic devices and the hybrid devices act as the main driving factor for the GaN transistors. The only restraint being faced by the market for GaN devices is the preference towards silicon-based devices when it comes to operating at high voltages.
The report covers Porter's Five Forces Model, Market Attractiveness Analysis and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level.
Additionally, these tools also give inclusive assessment of each application/product segment in the global market of GaN power device.
Market Segmentation
The entire GaN power device market has been sub-categorized into device and application. The report provides an analysis of these subsets with respect to the geographical segmentation. This research study will keep marketer informed and helps to identify the target demographics for a product or service.
By Device
- GaN Power Discrete Devices
- GaN Power ICs
- GaN Power Module
By Application
- Consumer Electronics
- IT & Telecommunication
- Automotive
- Aerospace & Defense
- Others
Regional Analysis
This section covers regional segmentation which accentuates on current and future demand for GaN power device market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand for individual application segment across all the prominent regions.
Global GaN Power Device Market Share by Region (Representative Graph)
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the GaN power device market include Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, Taiwan Semiconductor Manufacturing Company. This section includes a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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