GaN Power Device Market to Showcase High Growth; to cross USD 3239.9 MN Mark by 2026

Posted On September 17, 2020     

During the period of 2020-2026 it is expected that the Global GaN Power Device Market will showcase a CAGR of 25%. The market is foreseen to reach USD 3239.9 MN by 2026 while it was valued at USD 679.5 MN in 2019 as stated in a the published market study by Value Market Research. Compared to silicon MOSFETs, the superior performance characteristics of GaN-based devices will be the key contributor to the growth of this market. Continuing digitization, automation, and increased energy consumption will heighten the development of GaN power devices because of their low-cost, high-performance attributes. Rapid miniaturization of semiconductors and energy-saving requirements has increased the demand for GaN devices in commercial, industrial applications and even in too stringent automotive parts. A surge in demand for radiofrequency equipment, wireless charging, civilian radars, jammers, satellite communications, electronic warfare, and missiles will be market promoters. The various barriers hampering this market will be high manufacturing costs and a lack of raw materials.

GaN power device is a power-switching and power-handling device made of Gallium Nitride. GaN power devices offer high efficiency and are becoming a viable high-performance alternative to silicon MOSFETs. GaN power devices are commonly used in high-power, high-density systems like servers and computers because of their excellent power handling capabilities. The GaN used in these devices contribute to miniaturization and energy-saving attributes and offer low resistance and high-frequency switching. They are an integral part of the hybrid electric vehicle, photovoltaic inverters, high-efficiency power supplies, electric vehicles, and RF switching.

The initial sections of the report "Global GaN Power Device Market Report By Device (GaN Power Discrete Devices, GaN Power ICs, GaN Power Module), By Application (Consumer Electronics, IT & Telecommunication, Automotive, Aerospace & Defense, Others) And By Regions - Industry Trends, Size, Share, Growth, Estimation And Forecast, 2019-2026" starts with the introduction, a crisp market summary followed by detailed revenue analysis as per segments and regions. The market drivers responsible for pushing the market growth are discussed in length in the report. The GaN Power Device market opportunities are useful to identify the profit canters and take the strategic decision accordingly.
On the basis of device the market is segmented into GaN Power Discrete Devices, GaN Power ICs, GaN Power Module. By application the GaN Power Device market is categorised as Consumer Electronics, IT & Telecommunication, Automotive, Aerospace & Defense, Others .The other regions studied in the report are North America, Europe, Latin America and Middle East & Africa. The regional spread of all the segments and sub segments are detailed in the report.

The Report Segments Global GaN Power Device Market -
By Device

  • GaN Power Discrete Devices
  • GaN Power ICs
  • GaN Power Module

By Application

  • Consumer Electronics
  • IT & Telecommunication
  • Automotive
  • Aerospace & Defense
  • Others

By Region

  • North America
  • Europe
  • Asia-Pacific
  • Latin America
  • Middle East & Africa

Players Profiled In the Report:
Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, Taiwan Semiconductor Manufacturing Company.

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