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글로벌 초고압 SiC전력 장치 시장 보고서유형(SiC MOSFET <10kV,SiC 초접합 MOSFET <10kV,SiC IGBT(10kV~20kV,20kV 이상)), 용도별(컨버터, 인버터, 변압기, 고속기차 드라이브, 기타), 최종 용도별(연계 그리드, 인피드 도시 지역,해상풍력, 메가솔라 PCS,기관차, 기타) 및 지역별- 업계 동향, 규모, 점유율,성장, 추정 및 예측(2023~2032년), 2023-2032

ID:VMR112114262
April 2024
REPORT FORMATS: ELECTRONIC (PDF), MS EXCEL

Frequently Asked Questions (FAQs) about this Report

In 2023, the global market size for Ultra High Voltage SiC Power Device was worth USD 6.98 Million.

Between 2024 and 2032, the Worldwide Ultra High Voltage SiC Power Device Market growth is projected to be nearly 22.19%.

Asia Pacific accounts for the largest market share of the Global Ultra High Voltage SiC Power Device Market.

The Global Ultra High Voltage SiC Power Device Market is segmented by Type (SiC MOSFETs <10 kV, SiC Superjunction MOSFET <10 kV, SiC IGBTs (10 kV-20 kV, Above 20 kV)), by Application (Converters, Inverters, Transformers, High Speed Train Drives, Others), by End-use (Interconnecting Grid, Infeed Urban Areas, Offshore Wind, Mega Solar PCS, Locomotive, Others).

The leading players in the Global Ultra High Voltage SiC Power Device Market are STMicroelectronics, Infineon Technologies AG, Wolfspeed, Rohm Co. Ltd., Mitsubishi Electric Corporation, Fuji Electric Co. Ltd., GeneSiC Semiconductor Inc., Toshiba Electronic Devices & Storage Corporation, Microchip Technology Inc., Sumitomo Electric Industries Ltd., Coherent Corp., Solitron Devices Inc., Littelfuse Inc.
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