Market Research Report

グローバル超高耐圧SiCパワーデバイス市場レポートタイプ (SiC MOSFET <10 kV、SiC スーパージャンクション MOSFET <10 kV、SiC IGBT (10 kV ~ 20 kV、20 kV 以上))、用途別(コンバータ、インバータ、変圧器、高速電車の運転、その他)、最終用途別(相互接続送電網、都市部の給電、洋上風力発電、メガソーラーPCS、機関車、その他)および地域別- 業界の動向、規模、シェア、成長、推定、予測、2023 ~ 2032 年, 2023-2032

April 2024

Frequently Asked Questions (FAQs) about this Report

In 2023, the global market size for Ultra High Voltage SiC Power Device was worth USD 6.98 Million.

Between 2024 and 2032, the Worldwide Ultra High Voltage SiC Power Device Market growth is projected to be nearly 22.19%.

Asia Pacific accounts for the largest market share of the Global Ultra High Voltage SiC Power Device Market.

The Global Ultra High Voltage SiC Power Device Market is segmented by Type (SiC MOSFETs <10 kV, SiC Superjunction MOSFET <10 kV, SiC IGBTs (10 kV-20 kV, Above 20 kV)), by Application (Converters, Inverters, Transformers, High Speed Train Drives, Others), by End-use (Interconnecting Grid, Infeed Urban Areas, Offshore Wind, Mega Solar PCS, Locomotive, Others).

The leading players in the Global Ultra High Voltage SiC Power Device Market are STMicroelectronics, Infineon Technologies AG, Wolfspeed, Rohm Co. Ltd., Mitsubishi Electric Corporation, Fuji Electric Co. Ltd., GeneSiC Semiconductor Inc., Toshiba Electronic Devices & Storage Corporation, Microchip Technology Inc., Sumitomo Electric Industries Ltd., Coherent Corp., Solitron Devices Inc., Littelfuse Inc.
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