Market Research Report

SiC mondial ultra haute tensionRapport sur le marché des appareils électriquesType (MOSFET SiC <10 kV,MOSFET à superjonction SiC <10 kV,IGBT SiC (10 kV-20 kV,Au-dessus de 20 kV)), par application(Convertisseurs, Onduleurs, Transformateurs, Haute VitesseEntraînements de train, autres), par utilisation finale(Réseau d'interconnexion, zones urbaines d'alimentation,Éolien offshore, méga solaire PCS,Locomotive, Autres) Et Par Régions- Tendances de l'industrie, taille, part,Croissance, estimation et prévisions, 2023-2032

ID:VMR112114262
April 2024
REPORT FORMATS: ELECTRONIC (PDF), MS EXCEL

Frequently Asked Questions (FAQs) about this Report

In 2023, the global market size for Ultra High Voltage SiC Power Device was worth USD 6.98 Million.

Between 2024 and 2032, the Worldwide Ultra High Voltage SiC Power Device Market growth is projected to be nearly 22.19%.

Asia Pacific accounts for the largest market share of the Global Ultra High Voltage SiC Power Device Market.

The Global Ultra High Voltage SiC Power Device Market is segmented by Type (SiC MOSFETs <10 kV, SiC Superjunction MOSFET <10 kV, SiC IGBTs (10 kV-20 kV, Above 20 kV)), by Application (Converters, Inverters, Transformers, High Speed Train Drives, Others), by End-use (Interconnecting Grid, Infeed Urban Areas, Offshore Wind, Mega Solar PCS, Locomotive, Others).

The leading players in the Global Ultra High Voltage SiC Power Device Market are STMicroelectronics, Infineon Technologies AG, Wolfspeed, Rohm Co. Ltd., Mitsubishi Electric Corporation, Fuji Electric Co. Ltd., GeneSiC Semiconductor Inc., Toshiba Electronic Devices & Storage Corporation, Microchip Technology Inc., Sumitomo Electric Industries Ltd., Coherent Corp., Solitron Devices Inc., Littelfuse Inc.
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