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全球超高压碳化硅功率器件市场报告作者类型(SiC MOSFET <10 kV,SiC 超结 MOSFET <10 kV,SiC IGBT(10 kV-20 kV,20 kV 以上)),按应用(转换器、逆变器、变压器、高速火车驱动,其他),按最终用途(互连电网、馈电城市地区、海上风电、巨型太阳能 PCS、机车、其他)及按地区- 行业趋势、规模、份额、2023-2032 年增长、估计和预测

April 2024

Frequently Asked Questions (FAQs) about this Report

In 2023, the global market size for Ultra High Voltage SiC Power Device was worth USD 6.98 Million.

Between 2024 and 2032, the Worldwide Ultra High Voltage SiC Power Device Market growth is projected to be nearly 22.19%.

Asia Pacific accounts for the largest market share of the Global Ultra High Voltage SiC Power Device Market.

The Global Ultra High Voltage SiC Power Device Market is segmented by Type (SiC MOSFETs <10 kV, SiC Superjunction MOSFET <10 kV, SiC IGBTs (10 kV-20 kV, Above 20 kV)), by Application (Converters, Inverters, Transformers, High Speed Train Drives, Others), by End-use (Interconnecting Grid, Infeed Urban Areas, Offshore Wind, Mega Solar PCS, Locomotive, Others).

The leading players in the Global Ultra High Voltage SiC Power Device Market are STMicroelectronics, Infineon Technologies AG, Wolfspeed, Rohm Co. Ltd., Mitsubishi Electric Corporation, Fuji Electric Co. Ltd., GeneSiC Semiconductor Inc., Toshiba Electronic Devices & Storage Corporation, Microchip Technology Inc., Sumitomo Electric Industries Ltd., Coherent Corp., Solitron Devices Inc., Littelfuse Inc.
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